Base Wafer for CMOS
With HICERAM's density and NGK's processing technology, we have realized a base wafer with high level of surface flatness. With ceramic forming technology, enlargement is possible, serving as a substitute substrate for sapphire contributing to higher the performance of high frequency CMOS devices.
We offer insulating base substrate that works as a substitute for sapphire material.
Interface of Silicon-HICERAM direct bonding
NGK's original high purity translucent Alumina
- High level of surface flatness ceramic wafer using NGK's original material of high purity and high density alumina; HICERAM
- With high cleanliness and precise flatness of the surface, NGK realizes direct-bonding.
- Large sizes up to 12 inch are available.
Comparison of Material Properties
|Wafer Diameter||inch||4 - 12|
|Wafer Thickness||mm||0.3 - 1.5|
|Surface Roughness||nm||Ra: < 2.0 Rt: < 20|
|Shaping (Warp)||um||< 100 (8,12Φ)|
(Na, K, Ca, Ti, Cr, Zn, Ni, Fe)
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