Creating new products

Next-generation wafers, intended for ultra-high-speed communications and EV power devices

Overview of products under development

Next-generation wafers

High-speed wireless communication networks like 5G and 6G require power amplifiers and filters capable of operating at higher frequencies. Data centers and core/metro networks require optical devices capable of handling optical transmissions at ultra-high-speed and with low power consumption. Beyond this, demands for higher output power, lower power loss, and greater reliability are expected to emerge for devices used in electric vehicles (EVs) and other applications.

To offer solutions that meet these all needs, NGK is currently developing high-performance next-generation wafer products that draw on our proprietary crystal growth method, ultra-precision-polishing technology, and multi-materials bonding technology.

Gallium Nitride (GaN) Wafer

From left to right: A 6-inch conductive GaN wafer; 4-inch semi-insulating GaN wafer; 4-inch bonded semi-insulating GaN wafer

Our gallium nitride (GaN) wafers are high-quality GaN wafers with low dislocation density achieved using NGK's proprietary liquid phase crystal growth method.

Applications possible through use of conductive GaN wafer will include production of high-power and low-loss devices for high-power laser diodes, electric vehicles, and power supply control units. Use of semi-insulating GaN wafer will enable performance gains for base stations of 5G and 6G communications and various radars.

The newly developed bonded semi-insulating GaN wafer produced by combining a GaN thin film with a silicon carbide (SiC) base substrate imparts the high heat dissipation properties of SiC to the low dislocation density GaN wafer, enhancing the performance and reducing the cost of high-frequency devices.

Gallium Nitride (GaN) Wafer

Silicon Carbide (SiC) Wafer

A 6-inch SiC wafer

Silicon carbide (SiC) wafers are used in the manufacture of SiC power semiconductors used in electric vehicles (EVs) and other applications.

NGK applies a proprietary crystal growth method to achieve lower dislocation density in its SiC wafers, making it possible to provide high-quality SiC wafers that improve the reliability and lower the cost of the power devices used in inverters for EVs and other applications.

Silicon carbide (SiC) wafer

Aluminum Nitride (AlN) Wafer

From left to right: A 2-inch and 4-inch AlN wafer

Aluminum nitride (AlN) wafers improve the performance of the deep ultraviolet light-emitting diodes (UVC-LEDs) used for sterilization. These wafers are also expected to find applications in next-generation power semiconductors. Using proprietary manufacturing methods, we have succeeded in producing 4-inch single-crystal AlN wafers, production in large diameters of which was previously regarded as difficult.

TFLN bonded wafer for optical communications

A 6-inch TFLN bonded wafer for optical communications

TFLN bonded wafers for optical communications are high-performance wafers made by precision-polishing a bonded wafer consisting of lithium niobate (LN) bonded to a base substrate. This product offers thin-film LNs free of crystal damage, which contributes to the development of optical modulation devices featuring lower power consumption and smaller dimensions—ideal for data centers and core/metro networks.

LT/LN bonded wafer for wireless communications

A 6-inch LT/LN bonded wafer for wireless communications

LT/LN bonded wafers for wireless communications are wafers used for SAW filters, made of lithium tantalate (LT) and lithium niobate (LN). NGK is currently manufacturing these wafers while also developing new ones by refining its proprietary direct-bonding and precision-polishing technologies to create high-frequency filters for 5G and 6G communications.

PZT bonded wafer for MEMS devices

PZT bonded wafer for MEMS devices

These bonded wafers are made by sintering high-performance PZT—a material that physically deforms upon electrical stimulation and generates electricity when physically deformed—which is bonded to various base substrates at room temperature. The wafers are precision-polished to a thickness of 10 to 50 μm. The larger displacements that can be achieved in this way compared to conventional film-deposited wafers allows the production of high-performance actuators and high-sensitivity sensor devices.

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