Gallium Nitride Wafer FGAN Wins Grand Prix Award at Semiconductor of the Year Awards
June 05, 2019
NGK INSULATORS, LTD. (President Taku Oshima; Headquarters: Nagoya, Japan; “NGK”) today announced that its gallium nitride (GaN) wafer FGAN was awarded the Grand Prix Award in the Electronic Materials for Semiconductors category at the 25th Semiconductor of the Year 2019 Awards held by the Electronic Device Industry News.
The Semiconductor of the Year Awards confer prizes on semiconductor products and technologies supporting cutting-edge IT devices and industries. This was the 25th edition of the awards program, which covered new products and technologies announced between April 2018 and March 2019. Award winners were selected for their performance in terms of criteria such as development innovation, construction of mass production framework, impact on society and future potential. Grand Prix and Excellence awards were presented in three categories: Semiconductor Devices, Semiconductor Equipment and Electronic Materials for Semiconductors.
FGAN is a low defect density GaN wafer created using NGK's original liquid phase crystal growth method covering the entire wafer surface instead of the vapor phase growth method, which is the crystal growth technology generally used. FGAN was commercialized in April 2018, with forecasts for greater future demand in high-output, high-efficiency semiconductor lasers using GaN wafers as a substitute for ultra-high-pressure mercury lamps, against the backdrop of the regulations on the use of mercury required by the Minamata Convention on Mercury, which came into effect in August 2017. Currently, a 2-inch diameter production framework is being built for light sources such as projectors, stadium lighting and car headlamps. NGK is aiming to achieve sales of \10 billion by FY2024.
NGK is continuing development to further reduce defect density and increase diameter. NGK is aiming to mass produce a 4-inch product for high-frequency devices by 2021 and a 6-inch product for power devices by 2023, as application is forecast in high-frequency devices that support the coming 5G communication age like amplifiers for wireless communication signals and satellite communications and power devices key for realizing a low-carbon society such as inverters for electric vehicles and plug-in hybrid vehicles and power conversion equipment for photovoltaic power.
FGAN was awarded after being recognized as a product made using original technology with innovative qualities and a mass production framework constructed and possessing future potential for application in devices that could support society. Going forward, NGK will accelerate development and production of high-quality FGAN to further spread the use of GaN substrates that realize high performance in devices.