Creating new products
High Crystallinity of GaN Wafers Helps Increase the Output, Efficiency, and Reliability of RF Devices, Power Devices, and Optical Devices
Overview of products under development
Our gallium nitride (GaN) wafers are high-quality GaN wafers with low dislocation density achieved using NGK's proprietary liquid phase crystal growth method.
Applications possible through use of conductive GaN wafer will include production of high-power and low-loss devices for high-power laser diodes, electric vehicles, and power supply control units. Use of semi-insulating GaN wafer will enable performance gains for base stations of 5G and 6G communications and various radars.
The newly developed bonded semi-insulating GaN wafer produced by combining a GaN thin film with a silicon carbide (SiC) base substrate imparts the high heat dissipation properties of SiC to the low dislocation density GaN wafer, enhancing the performance and reducing the cost of high-frequency devices.
Properties
Realizes high crystallinity
GaN wafers crystallized from a liquid-phase equilibrium system exhibit remarkably high crystallinity, with few dislocations.
In addition to improving reliability, high crystallinity helps increase the output and efficiency of optical devices, RF devices, and power devices manufactured using these wafers.
Cathodoluminescence image*
X-ray rocking curve measurement*
| Diffraction plane | FWHM |
|---|---|
| (0002) | 50 arcsec.(typical) |
- *Crystalline quality is evaluated by sharpness of diffraction X-rays.
Specifications
| Item | Unit | 2-inch | 4-inch | 6-inch |
|---|---|---|---|---|
| Diameter | mm | 50 ± 0.3 | 100 ± 0.3 | 150 ± 0.3 |
| Thickness | µm | 330 ± 30 | 360 ± 40 | 400 ± 60 |
| TTV | µm | ≦ 20 | ≦ 20 | ≦ 50 |
| SORI | µm | ≦ 25 | ≦ 50 | ≦ 100 |
| Surface orientation | - | (0001) | (0001) | (0001) |
| Off-angle | degree | 0.5 ± 0.2 | 0.5 ± 0.25 | 0.5 ± 0.3 |
| Dislocation density | /cm2 | ≦ 2ｘ106 | ← | ← |
| Resistivity (conductive) | Ω･cm | ≦ 0.02 | ← | ← |
| Resistivity (semi-insulating) | Ω･cm | ≧105 | ← | ← |
| Gallium-face | - | Polished and surface treatment | ← | ← |
| Nitrogen-face | - | Lapped and etched | ← | ← |
Newly Developed Bonded Semi-Insulating GaN Wafer
This new product features lower dislocation density and higher heat dissipation performance than current products, thereby contributing to improved GaN device performance.
NGK has developed a novel bonded semi-insulating GaN wafer that combines a GaN thin film with a silicon carbide (SiC) base substrate. Adding the high heat dissipation of the SiC to the low dislocation density of the GaN wafer should enhance the performance of high frequency devices at lower cost.
