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Electrostatic chucks

Overview

Electrostatic chucks

These electrostatic chucks are designed to chuck the silicon wafer and keep it flat, allowing the wafer to uniformly dissipate the heat received from the plasma. NGK's electrostatic chucks have excellent strength, thermal conductivity and thermal shock resistance and are capable for a wide range of temperature as a result of NGK's proprietary volume resistivity control technology. NGK has aluminum nitride (AlN) and aluminium oxide (Al2O3) materials for this application.

Advantages

Wide operating temperature range (-50~700 deg.C)

These electrostatic chucks have excellent strength, thermal conductivity and thermal shock resistance and are capable for a wide range of temperature by NGK's proprietary volume resistivity control of ceramics.

High corrosion resistance

These electrostatic chucks have superior corrosion resistance against halogen gas.

Low particle treatment

Low particle treatment is available by surface treatment and special cleaning

High purity

Purity of 99.9% or higher is also available. Alkali metals, critical contamination in semiconductor manufacturing, have been reduced to less than 1 ppm.

Heating function

The high-precision heating element embedding technology enables integration with the heater function, and the wafer temperature can be controlled to less than ± 1%.

Cooling function

These electrostatic chucks have extremely high cooling performance by bonding ceramic plate, which has high thermal conductivity, and a cooling plate.

RF electrode

Bulk metal electrodes provide stable wafer chucking and RF plasma generation at the same time.

Specification

Size Compatible with 200, 300 and 450mm wafer
Chucking mechanism Johnsen-Rahbek (AlN), Coulomb (Al2O3
Electrode shape Mono polar / Bi polar

AlN material properties

  Aluminum Nitride
HA-12 HA-37/38 HA-50/51
Purity (%) 95 99 99
Density [g/cc] 3.3 3.3 3.3
Volume resistivity [Ωcm](RT) >1E+15 1E+8〜+13 >1E+15
Heat conductivity [W/mK](RT) 170 100 80
Coefficient of thermal expansion (RT) 5.7(1000℃) 5.0(1000℃) 5.6(1000℃)
Intensity [MPa](RT) >300 >300 >250
Young's Modulus [GPa](RT) 300 300 300
Dielectric constant (13.56MHz、RT) 8.6 8.8 8.6

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