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NGK presents research findings on SiC wafers at ICSCRM2024
First exhibition of 8-inch SiC wafer
September 17, 2024
NGK Insulators (NGK) will participate in the International Conference on Silicon Carbide and Related Materials (ICSCRM2024), which will be held in Raleigh, North Carolina, United States, from Sunday, September 29, 2024, to Friday, October 4, 2024. We will present our research findings on Silicon Carbide (SiC) wafers used in next-generation power semiconductor devices. Additionally, we will exhibit related products, including our newly unveiled 8-inch SiC wafer.
Conference Overview
| Conference Name | ICSCRM2024 |
|---|---|
| City / Country | Raleigh, North Carolina, United States |
| Venue | Raleigh Convention Center 500 South Salisbury Street Raleigh, NC 27601 |
| Official Website | ICSCRM2024 CONFERENCE |
| Dates | September 29 (Sun) to October 4 (Fri), 2024 |
Presentation Overview
Oral Presentation
| Date and Time | October 3 (Thu), 2024, 15:20-15:40 |
|---|---|
| Room No. | Room 305 (Bulk Growth 2) |
| Title | A novel method to grow 4H-SiC single crystals with low BPD densities on multiple substrates: Grown crystals’ properties and their controlling factors |
| Presenters | Jun Yoshikawa*, Hiroshi Fukui, Yohei Okada, Risa Miyakaze, Shinya Matsukawa, Kiyoshi Matsushima |
| Presentation Summary | Reduction of basal plane dislocations (BPDs) in SiC substrates is an important issue to improve yield and reliability of SiC power devices. NGK has been developing a proprietary method to grow 4H-SiC crystals with low BPD densities on multiple substrates by utilizing its ceramic processing technologies. In this presentation, we will present an overview of this process and the basic properties of the grown crystals along with their control factors. |
- *Oral Speaker
Poster Presentation
| Date and Time | October 3 (Thu), 2024, 16:30-18:30 |
|---|---|
| Location | No.38 |
| Title | A novel method to grow 4H-SiC single crystals with low BPD densities on multiple substrates: Behaviors of BPDs and other defects |
| Presenters | Yuki Urata*, Risa Miyakaze, Hiroshi Fukui, Yohei Okada, Shinya Matsukawa, Kiyoshi Matsushima, Jun Yoshikawa |
| Presentation Summary | In this poster presentation, we will report the results of detailed analysis of various defects in SiC crystals obtained by the proprietary method. Specifically, the reduction behavior of BPDs associated with crystal growth, as well as the propagation behavior of other defects such as micropipes and threading screw dislocations (TSDs) will be presented. |
- *Speaker
Exhibited Products
Silicon Carbide (SiC) wafer
Silicon carbide (SiC) wafers are used in the manufacture of SiC power semiconductors used in electric vehicles (EVs) and other applications.
NGK applies a proprietary crystal growth method to achieve lower dislocation density in its SiC wafers, making it possible to provide high-quality SiC wafers that improve the reliability and lower the cost of the power devices used in inverters for EVs and other applications.
We will be exhibiting a 8-inch SiC wafer grown using our proprietary crystal growth method for the first time.
About Silicon carbide (SiC) wafer
R＆D Sample:
Conductive GaN wafer
Our gallium nitride (GaN) wafers are high-quality GaN wafers with low dislocation density achieved using NGK's proprietary liquid phase crystal growth method. Applications possible through use of conductive GaN wafers will include production of high-power and low-loss devices for high-power laser diodes, electric vehicles, and power supply control units.
TFLN bonded wafer for optical communications
TFLN bonded wafers for optical communications are high-performance wafers made by precision-polishing a bonded wafer consisting of lithium niobate (LN) bonded to a base substrate. This product offers thin-film LNs free of crystal damage, which contributes to the development of optical modulation devices featuring lower power consumption and smaller dimensions—ideal for data centers and core/metro networks.
Large Current Ceramic Wiring Board
Large Current Ceramic Wiring Board is a new solution for wiring connections, which reduces switching surges and enables full-speed operation of SiC power devices by embedded thick Cu conductors in multi-layer ceramic substrate through NGK unique ceramic technologies.
AMB and DCB Substrates for Power Modules
SN-AMB*1 and DCB*2 Substrates for Power Modules are products in which copper plates are bonded to each surface of a ceramic plate, which is an insulating material. These products are equipped with a high thermal conductivity and a high electric conductivity of copper and a high insulation property of ceramic substrate.
- *1SN-AMB: Si3N4-Active Metal Brazing method
- *2DCB: Direct Copper Bonding method
Next-generation wafer
Gallium Nitride (GaN) Wafer
AMB and DCB Substrates for Power Modules